Part Number Hot Search : 
UL1520L P7NM50 MA4060B EPZ3022G PIC12 8123MB AYF35 IRF73
Product Description
Full Text Search
 

To Download BUK768R1-100E Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  BUK768R1-100E n-channel trenchmos standard level fet 5 october 2012 product data sheet 1. product profile 1.1 general description standard level n-channel mosfet in a sot404 package using trenchmos technology. this product has been designed and qualified to aec q101 standard for use in high performance automotive applications. 1.2 features and benefits ? aec q101 compliant ? repetitive avalanche rated ? suitable for thermally demanding environments due to 175 c rating ? true standard level gate with vgs(th) rating of greater than 1v at 175 c 1.3 applications ? 12v, 24v and 48v automotive systems ? electric and electro-hydraulic power steering ? motors, lamps and solenoid control ? start-stop micro-hybrid applications ? transmission control ? ultra high performance power switching 1.4 quick reference data table 1. quick reference data symbol parameter conditions min typ max unit v ds drain-source voltage t j 25 c; t j 175 c - - 100 v i d drain current v gs = 10 v; t mb = 25 c; fig. 1 [1] - - 100 a p tot total power dissipation t mb = 25 c; fig. 2 - - 263 w static characteristics r dson drain-source on-state resistance v gs = 10 v; i d = 25 a; t j = 25 c; fig. 11 - 6.4 8.1 m dynamic characteristics q gd gate-drain charge v gs = 10 v; i d = 25 a; v ds = 80 v; t j = 25 c; fig. 13 ; fig. 14 - 38.6 - nc [1] continuous current is limited by package. downloaded from: http:///
? nexperia b.v. 2017. all rights reserved nexperia BUK768R1-100E n-channel trenchmos standard level fet BUK768R1-100E all information provided in this document is subject to legal disclaimers. product data sheet 5 october 2012 2 / 13 2. pinning information table 2. pinning information pin symbol description simplified outline graphic symbol 1 g gate 2 d drain 3 s source mb d mounting base; connected to drain mb 1 3 2 d2pak (sot404) s d g mbb076 3. ordering information table 3. ordering information package type number name description version BUK768R1-100E d2pak plastic single-ended surface-mounted package (d2pak); 3 leads (one lead cropped) sot404 4. marking table 4. marking codes type number marking code BUK768R1-100E BUK768R1-100E 5. limiting values table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage t j 25 c; t j 175 c - 100 v v dgr drain-gate voltage r gs = 20 k - 100 v v gs gate-source voltage t j 175 c; dc -20 20 v t mb = 25 c; v gs = 10 v; fig. 1 [1] - 100 a i d drain current t mb = 100 c; v gs = 10 v; fig. 1 - 78 a i dm peak drain current t mb = 25 c; pulsed; t p 10 s; fig. 4 - 439 a p tot total power dissipation t mb = 25 c; fig. 2 - 263 w t stg storage temperature -55 175 c t j junction temperature -55 175 c downloaded from: http:///
? nexperia b.v. 2017. all rights reserved nexperia BUK768R1-100E n-channel trenchmos standard level fet BUK768R1-100E all information provided in this document is subject to legal disclaimers. product data sheet 5 october 2012 3 / 13 symbol parameter conditions min max unit source-drain diode i s source current t mb = 25 c [1] - 100 a i sm peak source current pulsed; t p 10 s; t mb = 25 c - 439 a avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy i d = 100 a; v sup 100 v; r gs = 50 ; v gs = 10 v; t j(init) = 25 c; unclamped; fig. 3 [2] [3] - 219 mj [1] continuous current is limited by package. [2] single-pulse avalanche rating limited by maximum junction temperature of 175 c. [3] refer to application note an10273 for further information. 003aah735 0 40 80 120 0 50 100 150 200 t mb ( c) i d (a) (1) (1) capped at 120a due to package fig. 1. continuous drain current as a function of mounting base temperature t mb (c) 0 200 150 50 100 03aa16 40 80 120 p der (%) 0 fig. 2. normalized total power dissipation as a function of mounting base temperature downloaded from: http:///
? nexperia b.v. 2017. all rights reserved nexperia BUK768R1-100E n-channel trenchmos standard level fet BUK768R1-100E all information provided in this document is subject to legal disclaimers. product data sheet 5 october 2012 4 / 13 003aah736 10 -1 1 10 10 2 10 3 10 -3 10 -2 10 -1 1 10 t al (ms) i al (a) (1) (2) (3) fig. 3. avalanche rating; avalanche current as a function of avalanche time 003aah737 10 -1 1 10 10 2 10 3 1 10 10 2 10 3 v ds (v) i d (a) limit r dson = v ds / i d dc 100 s 10 ms t p =10 s 100 ms 1 ms fig. 4. safe operating area; continuous and peak drain currents as a function of drain-source voltage 6. thermal characteristics table 6. thermal characteristics symbol parameter conditions min typ max unit r th(j-mb) thermal resistance from junction to mounting base fig. 5 - - 0.57 k/w r th(j-a) thermal resistance from junction to ambient minimum footprint ; mounted on a printed-circuit board - 50 - k/w downloaded from: http:///
? nexperia b.v. 2017. all rights reserved nexperia BUK768R1-100E n-channel trenchmos standard level fet BUK768R1-100E all information provided in this document is subject to legal disclaimers. product data sheet 5 october 2012 5 / 13 003aah108 single shot 0.2 0.1 0.05 10 -3 10 -2 10 -1 1 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 1 t p (s) z th(j-mb) (k/w) = 0.5 0.02 t p t p t t p t = fig. 5. transient thermal impedance from junction to mounting base as a function of pu lse duration 7. characteristics table 7. characteristics symbol parameter conditions min typ max unit static characteristics i d = 250 a; v gs = 0 v; t j = 25 c 100 - - v v (br)dss drain-source breakdown voltage i d = 250 a; v gs = 0 v; t j = -55 c 90 - - v i d = 1 ma; v ds = v gs ; t j = 25 c; fig. 9 ; fig. 10 2.4 3 4 v i d = 1 ma; v ds = v gs ; t j = 175 c; fig. 9 1 - - v v gs(th) gate-source threshold voltage i d = 1 ma; v ds = v gs ; t j = -55 c; fig. 9 - - 4.5 v v ds = 100 v; v gs = 0 v; t j = 25 c - 0.02 1 a i dss drain leakage current v ds = 100 v; v gs = 0 v; t j = 175 c - - 500 a v gs = 20 v; v ds = 0 v; t j = 25 c - 2 100 na i gss gate leakage current v gs = -20 v; v ds = 0 v; t j = 25 c - 2 100 na v gs = 10 v; i d = 25 a; t j = 25 c; fig. 11 - 6.4 8.1 m r dson drain-source on-state resistance v gs = 10 v; i d = 25 a; t j = 175 c; fig. 11 ; fig. 12 - - 21.9 m dynamic characteristics q g(tot) total gate charge - 108 - nc q gs gate-source charge - 22.8 - nc q gd gate-drain charge i d = 25 a; v ds = 80 v; v gs = 10 v; t j = 25 c; fig. 13 ; fig. 14 - 38.6 - nc downloaded from: http:///
? nexperia b.v. 2017. all rights reserved nexperia BUK768R1-100E n-channel trenchmos standard level fet BUK768R1-100E all information provided in this document is subject to legal disclaimers. product data sheet 5 october 2012 6 / 13 symbol parameter conditions min typ max unit c iss input capacitance - 5535 7380 pf c oss output capacitance - 521 625 pf c rss reverse transfer capacitance v gs = 0 v; v ds = 25 v; f = 1 mhz; t j = 25 c; fig. 15 - 352 482 pf t d(on) turn-on delay time - 23.5 - ns t r rise time - 44.1 - ns t d(off) turn-off delay time - 72 - ns t f fall time v ds = 80 v; r l = 3.2 ; v gs = 10 v; r g(ext) = 5 - 49.6 - ns l d internal drain inductance from upper edge of mounting base to centre of die - 2.5 - nh l s internal source inductance measured from source lead to source bond pad ; t j = 25 c - 7.5 - nh source-drain diode v sd source-drain voltage i s = 25 a; v gs = 0 v; t j = 25 c; fig. 16 - 0.82 1.2 v t rr reverse recovery time - 55 - ns q r recovered charge i s = 20 a; di s /dt = -100 a/s; v gs = 0 v; v ds = 25 v - 134 - nc 003aah739 0 60 120 180 240 0 2 4 6 v ds (v) i d (a) v gs (v) = 10 4.5 5 6 4 5.5 t j = 25 c; t p = 300 s fig. 6. output characteristics; drain current as a function of drain-source voltage; typical values 003aah740 0 5 10 15 20 0 5 10 15 20 v gs (v) r dson (m ) fig. 7. drain-source on-state resistance as a function of gate-source voltage; typical values downloaded from: http:///
? nexperia b.v. 2017. all rights reserved nexperia BUK768R1-100E n-channel trenchmos standard level fet BUK768R1-100E all information provided in this document is subject to legal disclaimers. product data sheet 5 october 2012 7 / 13 003aah742 0 50 100 150 200 250 0 2 4 6 8 10 v gs (v) i d (a) t j = 25 c t j = 175 c fig. 8. transfer characteristics; drain current as a function of gate-source voltage; typical values 003aah027 0 1 2 3 4 5 -60 0 60 120 180 t j ( c) v gs(th) (v) max typ min fig. 9. gate-source threshold voltage as a function of junction temperature 003aah028 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 0 2 4 6 v gs (v) i d (a) max typ min fig. 10. sub-threshold drain current as a function of gate-source voltage 003aah745 0 5 10 15 20 25 0 80 160 240 i d (a) r dson (m ) v gs (v) = 10 5 4.5 5.5 6 t j = 25 c; t p = 300 s fig. 11. drain-source on-state resistance as a function of drain current; typical values downloaded from: http:///
? nexperia b.v. 2017. all rights reserved nexperia BUK768R1-100E n-channel trenchmos standard level fet BUK768R1-100E all information provided in this document is subject to legal disclaimers. product data sheet 5 october 2012 8 / 13 003aag818 0 0.6 1.2 1.8 2.4 3 -60 0 60 120 180 t j ( c) a fig. 12. normalized drain-source on-state resistance factor as a function of junction temperature 003aah747 0 2 4 6 8 10 0 40 80 120 q g (nc) v gs (v) v ds = 80v 14 v fig. 13. gate-source voltage as a function of gate charge; typical values 003aaa508 v gs v gs(th) q gs1 q gs2 q gd v ds q g(tot) i d q gs v gs(pl) fig. 14. gate charge waveform definitions 003aah748 10 2 10 3 10 4 10 -1 1 10 10 2 v ds (v) c (pf) c iss c rss c oss fig. 15. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values downloaded from: http:///
? nexperia b.v. 2017. all rights reserved nexperia BUK768R1-100E n-channel trenchmos standard level fet BUK768R1-100E all information provided in this document is subject to legal disclaimers. product data sheet 5 october 2012 9 / 13 003aah749 0 80 160 240 320 400 0 0.4 0.8 1.2 1.6 v sd (v) i s (a) t j = 25 c t j = 175 c fig. 16. source (diode forward) current as a function of source-drain (diode forward) voltage; typical values downloaded from: http:///
? nexperia b.v. 2017. all rights reserved nexperia BUK768R1-100E n-channel trenchmos standard level fet BUK768R1-100E all information provided in this document is subject to legal disclaimers. product data sheet 5 october 2012 10 / 13 8. package outline unit a references outline version european projection issue date iec jedec jeita mm a 1 d 1 d max. e e l p h d q c 2.54 2.60 2.20 15.80 14.80 2.90 2.10 11 1.60 1.20 10.30 9.70 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 b dimensions (mm are the original dimensions) sot404 0 2.5 5 mm scale plastic single-ended surface-mounted package (d2pak); 3 l eads (one lead cropped) sot404 e e e b d 1 h d d q l p c a 1 a 1 3 2 mounting base 05-02-11 06-03-16 fig. 17. package outline d2pak (sot404) downloaded from: http:///
? nexperia b.v. 2017. all rights reserved nexperia BUK768R1-100E n-channel trenchmos standard level fet BUK768R1-100E all information provided in this document is subject to legal disclaimers. product data sheet 5 october 2012 11 / 13 9. legal information 9.1 data sheet status document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objective specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification. [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest product status information is available on the internet at url http://www.nexperia.com . 9.2 definitions preview the document is a preview version only. the document is still subject to formal approval, which may result in modifications or additions. nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nexperia sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification the information and data provided in a product data sheet shall define the specification of the product as agreed between nexperia and its customer, unless nexperia and customer have explicitly agreed otherwise in writing. in no event however, shall an agreement be valid in which the nexperia product is deemed to offer functions and qualities beyond those described in the product data sheet. 9.3 disclaimers limited warranty and liability information in this document is believed to be accurate and reliable. however, nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. nexperia takes no responsibility for the content in this document if provided by an information source outside of nexperia. in no event shall nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nexperias aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nexperia. right to make changes nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use in automotive applications this nexperia product has been qualified for use in automotive applications. unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nexperia and its suppliers accept no liability for inclusion and/or use of nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. quick reference data the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. applications applications that are described herein for any of these products are for illustrative purposes only. nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nexperia products, and nexperia accepts no liability for any assistance with applications or customer product design. it is customers sole responsibility to determine whether the nexperia product is suitable and fit for the customers applications and products planned, as well as for the planned application and use of customers third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customers applications or products, or the application or use by customers third party customer(s). customer is responsible for doing all necessary testing for the customers applications and products using nexperia products in order to avoid a default of the applications and the products or of the application or use by customers third party customer(s). nexperia does not accept any liability in this respect. limiting values stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nexperia hereby expressly objects to applying the customers general terms and conditions with regard to the purchase of nexperia products by customer. downloaded from: http:///
? nexperia b.v. 2017. all rights reserved nexperia BUK768R1-100E n-channel trenchmos standard level fet BUK768R1-100E all information provided in this document is subject to legal disclaimers. product data sheet 5 october 2012 12 / 13 no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from competent authorities. translations a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 9.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. downloaded from: http:///
? nexperia b.v. 2017. all rights reserved nexperia BUK768R1-100E n-channel trenchmos standard level fet BUK768R1-100E all information provided in this document is subject to legal disclaimers. product data sheet 5 october 2012 13 / 13 10. contents 1 product profile ........................................ ............... 1 1.1 general description ............................................. . 1 1.2 features and benefits .......................................... .1 1.3 applications .............................................. ............ 1 1.4 quick reference data ........................................... . 1 2 pinning information ................................... ............ 2 3 ordering information ..................................... ........ 2 4 marking .............................................. ..................... 2 5 limiting values ........................................ ...............2 6 thermal characteristics .........................................4 7 characteristics .............................................. ......... 5 8 package outline ......................................... .......... 10 9 legal information ....................................... ..........11 9.1 data sheet status .......................................... ..... 11 9.2 definitions .............................................. .............11 9.3 disclaimers ................................................ .........11 9.4 trademarks ............................................... ......... 12 05 october 2012 downloaded from: http:/// ? nexperia b.v. 2017. all rights reserved for more information, please visit: http://www.nexperia.com for sales office addresses, please send an email to: salesaddresses@nexperia.com date of release:


▲Up To Search▲   

 
Price & Availability of BUK768R1-100E

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X